Inductively coupled plasma system with internal coil

ABSTRACT

Embodiments of the inventive technology may be a plasma system that comprises a coil powered by a power source so as to generate or enhance a plasma in a process chamber; and a dielectric form that itself is established within the process chamber and that defines an internal volume in which at least a portion of a coil is established. In various embodiments, the dielectric form has two ends supported by at least one support member at two support sites and/or has a form centerline in a system with a substrate support adapted to support a substrate with a process surface that defines a process surface plane that is parallel the form centerline.

BACKGROUND OF THE INVENTIVE TECHNOLOGY

Generally, this inventive technology relates to an inductively coupledplasma system. More specifically, this inventive technology relates toan inductively coupled plasma system in which an internal coilestablished in a dielectric form that itself is positioned in a processchamber either generates or enhances a plasma.

It has long been desired to process a substrate surface (e.g., coat aglass windshield) that has two rather long dimensions (e.g., where eachwidth and length is greater than one meter). Where only one substratedimension is long (e.g., where its surface to be processed is only threeinches wide but two meters long), processing of the entire substrateprocess surface does not require a two meter plasma, as a three inchlong plasma can be used to process the substrate as it is continuouslyfed alongside the plasma such that the entire length is processed.However, of course, without a long plasma, this method cannot be used toprocess a substrate surface whose width and length are each long, suchas a flat panel that has significant length and width.

Not only are long inductively coupled plasma sources hard to find ornon-existent, but alternative methods designed to address theabove-referenced problem of processing substrates with long and wideprocess surface may involve certain mechanical problems, includingdesigning or adapting a process chamber in order to install a plasmasource with external coils. Additionally, it may be very difficult toposition such a plasma source sufficiently close to the substrate.

Other attempted solutions to the large processing surface probleminclude using a capacitively coupled plasma system. However, in somesuch systems, sputtering of the electrodes may be undesired and maycontaminate the substrate. Also, in chemically reactive plasmas,electrodes may oxidize and capacitive coupling changes as a result,leading to an unstable process.

SUMMARY OF THE INVENTION

The present inventive technology includes a variety of aspects which maybe selected in different combinations based upon the particularapplication or needs to be addressed. In one basic form, the inventivetechnology discloses a plasma system that comprises a coil powered by apower source so as to generate or enhance a plasma in a process chamber;and a dielectric form that itself is established within the processchamber and that defines an internal volume in which at least a portionof a coil is established. In various embodiments, the dielectric formhas two ends supported by at least one support member at two supportsites and/or has a form centerline; the system may further include asubstrate support adapted to support a substrate with a process surfacethat itself defines a process surface plane that is parallel to the formcenterline.

One of the broad objectives of embodiments of the inventive technologyis to allow for the processing of substrate surfaces having long widthand length while avoiding problems associated with other types of plasmasystems (e.g., inductively coupled plasma systems). Indeed, certainembodiments of the inventive technology may be used to achieve a long,uniform inductively coupled plasma (as but one exemplary range, theplasma could be 3-9 feet in length).

Another broad goal of those embodiments of the inventive technology thatinclude a magnetron (or perhaps another type of plasma element such asan ion source) is to enable a reduction in the voltage requirements ofthe magnetron or ion source by providing a coil that can enhance theplasma generated by the magnetron or ion source, or perhaps by providinga coil that generates its own plasma.

Another broad goal of the inventive technology is improvement in systemsable to treat moving glass or other substrates.

Naturally, further objects of the invention are disclosed throughoutother areas of the specification and claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows an inductively coupled plasma system in accordance with atleast one embodiment of the inventive technology.

FIG. 2 shows an inductively coupled plasma system in accordance with atleast one embodiment of the inventive technology.

FIG. 3 shows an inductively coupled plasma system in accordance with atleast one embodiment of the inventive technology.

FIG. 4 shows an inductively coupled plasma system in accordance with atleast one embodiment of the inventive technology.

FIG. 5 shows an inductively coupled plasma system in accordance with atleast one embodiment of the inventive technology.

FIG. 6 shows an inductively coupled plasma system in accordance with atleast one embodiment of the inventive technology.

FIG. 7 shows an inductively coupled plasma system in accordance with atleast one embodiment of the inventive technology.

FIG. 8 shows a cross-section of an inductively coupled plasma system inaccordance with at least one embodiment of the inventive technology.

FIG. 9 shows a view of a portion of an inductively coupled plasma systemin accordance with at least one embodiment of the inventive technology.

FIG. 10 shows two dielectric forms and their internal coil as may appearin an inductively coupled plasma system in accordance with at least oneembodiment of the inventive technology.

FIG. 11 shows a rotating drum batch coating system as may appear beincorporated in at least one embodiment of the inventive technology.

FIG. 12 shows cross-sections of dielectric forms and different coiltypes as may appear in certain embodiments of the inventive technology.

FIG. 13 shows cross-sections of dielectric forms and different coiltypes as may appear in certain embodiments of the inventive technology.

FIG. 14 shows cross-sections of dielectric forms as may appear incertain embodiments of the inventive technology.

FIG. 15 shows a cross-section of a magnetron as may be incorporated inat least one embodiment of the inventive technology.

FIG. 16 shows a linear or single beam ion source as may be incorporatedin at least one embodiment of the inventive technology.

FIG. 17 shows a schematic of an ion beam source as may be applied, forsubstrate pre- and post-treatment in at least one embodiment of theinventive technology.

FIG. 18 shows a schematic of an ion beam source as may be applied fordirect deposition on a substrate in at least one embodiment of theinventive technology.

FIG. 19 shows a schematic of an ion beam source as may be applied forion beam assisted deposition on a substrate in at least one embodimentof the inventive technology.

FIG. 20 shows a squirrel cage type faraday shield.

FIG. 21 shows a side schematic view of elements of a web roll coater inwhich the inventive technology may find application.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

As mentioned earlier, the present invention includes a variety ofaspects; all may be combined in different ways. The followingdescriptions are provided to list elements and describe some of theembodiments of the present invention. These elements are listed withinitial embodiments, however it should be understood that they may becombined in any manner and in any number to create additionalembodiments. The variously described examples and preferred embodimentsshould not be construed to limit the present invention to only theexplicitly described systems, techniques, and applications. Further,this description should be understood to support and encompassdescriptions and claims of all the various embodiments, systems,techniques, methods, devices, and applications with any number of thedisclosed elements, with each element alone, and also with any and allvarious permutations and combinations of all elements in this or anysubsequent application.

At least one embodiment of the inventive technology may be a plasmasystem 1 that comprises a coil 2 powered by a power source 3 (includingbut not limited to an RF power source 4) so as to generate or enhance aplasma 5 in a process chamber 6; and a dielectric form 7 that itself isestablished within the process chamber, has two ends 8 supported by atleast one support member 9 at two support sites 10 (e.g., where thedielectric form contacts the support member(s)), and defines an internalvolume 11. In such system, at least a portion of the coil is establishedin the internal volume. Advantages of such a system include but are notlimited to the ability to process substrate surfaces having long widthand length (e.g., each over 1 meter) while avoiding problems associatedwith other types of plasma source. Another potential advantage, inaddition to those discussed elsewhere, is an ability to processsubstrates in pure oxygen at “magnetron” pressures of three to ten Torr,where desired.

At least one embodiment of the inventive technology may relate inparticular to only those embodiments that process a substrate 12 in somemanner, whether to etch, clean, preheat, or deposit material on thatsubstrate. Such system may comprises a coil powered by a power source soas to generate or enhance a plasma in a process chamber; a dielectricform that defines both an internal volume and a form centerline 13; anda substrate support 14 adapted to support a substrate in the processchamber, where the substrate has a process surface 15 defining a processsurface plane 16, where at least a portion of the coil is established inthe internal volume, and where the form centerline is substantiallyparallel the process surface plane. Advantages of such a system includebut are not limited to the ability to process substrate surfaces havinglong width and length (e.g., each over 1 meter) while avoiding problemsassociated with other types of plasma source. Another potentialadvantage, in addition to those discussed elsewhere, is an ability toprocess substrates in pure oxygen at “magnetron” pressures of three toten Torr, where desired. What follows describes aspects of the inventivetechnology as may relate to any of its primary manifestations (two ofwhich are described above), unless stated otherwise.

The power source 3, whether powering the coil, any magnetron that mayexist, or 25 both, may be an AC power source (e.g., an AC power source),such as a RF (radio frequency) generator, and, as but one range, mayoperate at between 350 KHz to 15 MHz. For reasons related to highimpedance of the coil and high capacitance to the ground, particularlygood results may be found at a relatively low frequency of 400 kHz. Incertain instances, the power source may be DC. Certain embodiments mayinclude an impedance matching network 18 (e.g., that may be connected toan RF power source) in order that the RF power remains as constant aspossible during the process, thereby assuring process quality andconsistency. The substrate support is any structure—even merely aprocess chamber floor, as but one example—that is capable of supportinga substrate as intended (whether horizontally, vertically, or in otherorientation). It is also noted that the term plasma system is used toreference any type of electrical system in which a plasma is used toachieve a desired effect (including but not limited to processing asubstrate surface in an intended manner).

The coil itself may be an induction coil with a plurality of windings.In preferred embodiments, it is operable as a solenoid to inductivelycouple energy through the dielectric form to a gas in order to generateand sustain, or merely enhance, a plasma of ionized gas particles. Itmay be a longitudinal coil 19 (a term that includes a coil that haswindings that each define a coil centerline that is substantiallyparallel to the centerline of the dielectric form), or, as but one otherexample, it may be what will be deemed a transverse coil 20 (see FIGS.12B and 13B). A transverse coil, like a longitudinal coil, also involvesa plurality of windings, but, unlike the standard longitudinal coil,more than one of such windings defines a centerline that is notsubstantially parallel with the centerline of the dielectric form inwhich the coil is established. Indeed, such a centerline of such windingin a transverse coil may be substantially orthogonal to the centerlineof the dielectric form in which the coil is established. It should beunderstood that the term centerline as used herein can not only bestraight, but also curved.

A transverse coil may be particularly suited where it is desired thatthe solenoid includes windings that each run along the length of thedielectric form. In those embodiments having a longitudinal coil, themagnetic field 63 established by the coil may indeed be relatively smallin the plasma (see FIG. 13A), while in embodiments having transversecoil, the magnetic field 64 may be comparatively stronger in the plasma(see FIG. 13B). The coil is conductive (as but one example it may becopper wire 142), and may be hollow so that water may flow through toenhance cooling of the dielectric form.

The dielectric form includes but is not limited to a dielectric tube 21(where the cross-section is circular 60, oval 61, or perhaps evenpolygonal 62, as but three of many possible examples). It may be madefrom any dielectric material, including but not limited to glass orquartz. It may have any of a multitude of outer diameters (3″-5″, as butone exemplary range). It may be established so as to provide fluidiccommunication through the form (e.g., such that a gas may pass throughone end of the form, to the other end, and through the other end). Incertain embodiments, it may extend along a dimension (e.g., a depth,width, height, or length) of the process chamber. The dielectric formmay, inter alia, eliminate exposed metal, and allow plasmageneration/maintenance in reactive gases.

The two ends of the dielectric form may be supported by at least onesupport member at two support sites. Such support member may be awall(s) 22 of the process chamber itself, or a structure 23 establishedwithin the process chamber. Such support may be provided either directly(e.g., where the ends themselves are attached to the at least onesupport member at the two support sites as shown in FIG. 1), orindirectly, where a part(s) of the dielectric form other than the endsis attached to the at least one support member at the two support sitesbut the rigidness of the form itself effects support of its ends (see,e.g., FIG. 4). Where the two ends of the dielectric form are supportedby two support members (e.g., where the support sites are on opposing ormerely different walls of the process chamber), the dielectric form willlikely be substantially straight (although it need not be), andsubstantially longitudinal (where the length is at least three times thecross-sectional dimension), as shown in FIG. 1. Where the two ends ofthe dielectric form are supported—either indirectly or directly—by onesupport member (e.g., the two support sites are on the same wall of theprocess chamber), the dielectric form will likely be curved, as shown inFIG. 6, whether smoothly curved or sharply curved. It should beunderstood that the term walls is intended to include not only planarboundaries but also those that are curved. It should also be understoodthat a capsule-like chamber having a smoothly curving inner surface isdeemed to have two opposing walls.

In various embodiments, there may be established within the processchamber one or more dielectric forms, each having a coil establishedtherein (see, e.g., FIGS. 1-7). In embodiments with two dielectric forms(e.g., as shown in FIG. 10), one coil may be deemed a first coil 24, itsdielectric form deemed a first dielectric form 25, its internal volumedeemed a first internal volume 26, and its generated magnetic fielddeemed a first magnetic field 27 in a first longitudinal direction 28,while a second dielectric form 29 may be established parallel the firstdielectric form and define a second internal volume 30 in which at leasta portion of a second coil 31 may be established to create a secondmagnetic field 32 in a direction 160 that 30 is opposite the firstlongitudinal direction. Such an multi-coil arrangement may effect alooped magnetic field 33 and a reduction in stray magnetic field. Eithera longitudinal or transverse coil may be used, in various embodiments,to achieve a plasma and resultant treatment process as intended.

The internal volume defined by the dielectric form may be atsubstantially atmospheric pressure. It may be an internal cavity 34, aswhere it is filled with only atmospheric or other gases, or perhaps evenat vacuum. The internal volume may include potting compound 35 (e.g.,RTV, room temperature vulcanizing silicone potting compound and/orcooling fluid 36 such as oil ), perhaps for enhanced cooling.Additionally perhaps, or instead, the dielectric form may include sometype of UV protection; such may be provided by a known type of UVprotective coating on the dielectric form, or by a material such as acertain type of quartz. As is known, UV rays from the plasma can lead tothe generation of ozone, which can degrade plastic or RTV pottingcompound.

At least one embodiment of the invention may focus on the use of aninternal coil in order to enhance a deposition process, whether suchdeposition is effected by a magnetron 37, ion source 38 or by otherprocess, including but not limited to chemical vapor deposition (as inplasma enhanced chemical vapor deposition). In plasma depositionprocess, the energized coil creates or enhances a plasma (e.g., one thatis often preferably high density and/or uniform) to bombard the surfaceof a target 71, leading to deposition on the substrate's process surface15. Further, it should be pointed out that the deposition process mayindeed also be reactive sputtering, in which a reactive gas that reactswith the sputtered material is introduced into the process chamber.

Where a magnetron is used, the effect to which the internal coil assiststhe deposition process may directly relate to its closeness to themagnetron—the closer the two are, the greater the deposition enhancementeffect caused by the internal coil, and, perhaps, the less voltagerequired by magnetron to achieve an intended deposition process. For ageneral understanding of types of magnetrons that may be used, includingbalanced and unbalanced magnetrons, and of magnetron sputtering,reference is made towww.pvd-coatings.co.uk/theory-of-pvd-coatings-magnetron.htm, andwww.pvd-coatings.co.uk/theory-of-pvd-coatings-magnetron-sputtering.htm,each as appearing on Jul. 11, 2006, and each hereby incorporated herein.It is also of note that the magnetic field created by the oftenDC-powered magnetron need not reach the substrate, although indeed itmay.

An ion source 38, when used, may be used instead of (see, e.g., FIG. 6),or in addition to, a magnetron. A few examples of ion sources that maybe used include those shown in FIGS. 17-19. It may be flange, remote orother mount, and may clean, etch, deposit material, etc. so as to treata substrate. Certain embodiments, e.g., linear or single-cell ion beamsources, may involve gas flow 81 through the ion source between theanode 82 and cathode, and the application, with power supply 110, of apositive voltage to the anode 82, that, in combination with the highmagnetic field between the tips of the internal and external cathodes,generates a plasma 85. An ion beam 84 is created when ions from theplasma 85 are repelled by the anode electric field. FIG. 16 showsrelative positions of anode 82, the gas flow 81, permanent magnet 80,the plasma 85 and ion beams 84. Of course, such ion sources mayincorporate some sort of electron emitter device (also known as aneutralizer), to supply electrons to the substrate surface, as taught in“Handbook of Ion Beam Processing Technology”, edited by Jerome J. Cuomo,Stephen M. Rossnagl and Harold R. Kaufman (Noyes Publications), herebyincorporated herein. The electron emitter frequently doubles as aneutralization device, or a second emitter sometimes is usedspecifically for neutralization. In certain embodiments, the plasma asgenerated by the inventive technology's dielectric form with internalcoil could act as an electron emitter or neutralizer for the ion source.It is of note that if a plasma system includes the dielectric form withinternal coil, then the system may be properly referred to as aninductively coupled plasma system, even where the system includes plasmagenerators that may be more properly termed capacitively coupling.

It is also noted that some closed-drift ion sources, such as the LISseries and MCIS series manufactured by Advanced Energy Industries ofFort Collins, Colo., do not require an electron emitter for theiroperation. Additionally, the ion beams that may be used in the inventivetechnology include, but are not limited to, the round and linear ionsources disclosed inhttp://www.advanced-energy.com/upload/SL-ION-230-02.pdf, as appearing onJul. 11, 2006, said webpages also incorporated herein. Variouswell-known ion beam source applications, as shown in FIGS. 17-19, may beincorporated as part of the inventive technology.

Embodiments of the inventive technology may involve use of an ion beamin certain processes (ion beam sources that may be used include but arenot limited to those shown in FIGS. 17-19). The inventive technology mayinvolve an ion source 90, gases 91 (e.g., Ar and oxygen), auxiliarygases 94, ion beams 92 and a substrate 93 as shown in FIG. 17, in asubstrate pre- and post-treatment application. It may involve an ionsource 100, gases and precursors 101, ion beams 102, auxiliary gases andprecursors 105, and a thin film/overcoat 103 on a substrate 104 as shownin FIG. 18, in a direct deposition process. And, in other embodimentsusing an ion source, the inventive technology may involve a magnetron170, an ion source 113, gases 112, auxiliary gases 114, to sputtermaterial 111 that thereafter becomes deposited material 116 on substrate115 as shown in FIG. 19, in an ion beam-assisted deposition process.

It is of note that in systems involving a conductive target (e.g., aconductive target of a magnetron), such target may be biased using knownbias systems 47 so as to enhance the process (e.g., by increasing theion bombardment rate). Instead, or in addition, a bias system (e.g., aRF bias system 48), which is well known per se, may operate on aconductive substrate 130 so as to enhance the process, whether it becleaning, preheating, etching, or deposition.

In embodiments that are designed for deposition (e.g., that include amagnetron, a chemical vapor deposition element 49, or include some othertype of deposition element), or that are designed for preheating,etching or cleaning, or indeed any other type of processing of asubstrate, there may, as mentioned, be provided a substrate supportelement. It is also of note that there may be provided some type ofcontinuous feed element 53 (e.g., a conveyor belt system, perhaps withrollers as shown) that is operable to move a substrate responsivethereto (e.g., a substrate lying on top of the belt) at a controlledspeed so that a plasma system sized to treat only a portion of thesubstrate at one time may treat the entire substrate as desired. In someembodiments, the substrate may be fed through a sealed lock 50 (a typeof slot, perhaps) so as not to affect the pressure in the processchamber, as the area from which the substrate is fed will typically beat a higher pressure. In other embodiments, the need for a well sealedlock may be eliminated through the use of a pre-chamber 51 (e.g., asshown in FIG. 4) that is at the same pressure as that of the processchamber.

In those embodiments that include a magnetron, the dielectric form andthe magnetron may be placed sufficiently close such that they togetherresult in only one plasma (see, e.g., FIG. 3); in such case, theinternal coil may be said to enhance a plasma (which may, but need not,be generated solely by the magnetron). In other embodiments, they may beplaced sufficiently far from one another such that they each generatetheir own plasma (see, e.g., FIG. 2). Especially in those embodimentswhere only one plasma is generated (as where, e.g., the internal coil ofthe dielectric form enhances a plasma that may be generated by themagnetron), the voltage required by the magnetron may be reduced;however, magnetron voltage requirements may also be reduced in thoseembodiments where two plasmas are generated. Distances between andrelative orientations of the magnetron and the dielectric form(s)necessary to effect plasma generation as intended may depend highly onseveral factors and may be most easily determined iteratively by trialand error. Such would be easily within the ken of an ordinary artisan.

As in FIG. 7, in embodiments where the plasma is generated so as toenhance chemical vapor deposition, there may be established a chemicalvapor deposition element 49. Such element may include all componentry,gases, etc. required in known chemical vapor deposition processes.

As alluded to above, the inventive technology may not only be used fordeposition and/or substrate preheating, but also for substrate cleaningand/or etching. In such embodiments, there might not be provided amagnetron or other type of deposition element.

In particular embodiments, at least a portion of the space within theprocess chamber (e.g., at least that space other than that occupied bythe dielectric form(s)) may be held at a vacuum (a term deemed tocharacterize, e.g., even those situations where a process gas (e.g., anon-reactive gas such as Argon) is introduced into the chamber inappropriate amounts through a gas inlet 65, such that a perfect vacuumdoes not exist).

Deposition type plasma systems may be a rotating drum batch coatingsystem 52 (see article “A High Rate Reactive Sputtering Process ForBatch, In-Line, or Roll Coaters”, by Boling et al., hereby incorporatedherein), may involve a continuous feed element 53 (e.g., so as to bettercoat, etch, preheat or clean large flat panel substrates), or even mayinvolve a substrate that is held stationary during the process (e.g.,cleaning, etching, preheating or deposition). In any process type,whether continuous or not, the dielectric form may be substantiallyhorizontal, vertical, off-horizontal, off-vertical, or have otherorientation. The dielectric form may have any orientation relative tothe substrate, as indeed it may be above the substrate, below thesubstrate, to the side of the substrate, in front of the substrate,behind the substrate, etc., depending on the particular demands of theprocessing application. The substrate itself may also be substantiallyhorizontal, vertical, off-horizontal, off-vertical, or have otherorientation. Continuous drum rotation systems may involve a pump 120,multiple substrates 121 and targets 122, plasma 123, active gas 124, amicrowave plasma applicator 125, and an optical gas controller 127 in arotating drum system as shown in FIG. 11.

Embodiments of the inventive technology may also find application in webcoaters (e.g., web coaters, web roll coaters, or other type). In suchembodiments (e.g., as shown in FIG. 21), typically the dielectric formand its internal coil would be established substantially parallel withthe central, longitudinal axis 180 of the drum 152. One example of themany types of web coaters in which the inventive technology may findapplication is as shown in FIG. 21. Such a web coater may include leftside load roll shaft 150, a right side load roll shaft 151, a dielectricform with internal coil 154, and/or a magnetron 153. Of course, otherprocessing devices such as a plasma gun and an evaporation source may beincorporated. Yet another example of a web coater in which the inventivetechnology may find application is as shown on page 1975 of Affinito etal.; Ultrahigh rate, wide area, plasma polymerized films, said referencehereby incorporated herein by reference. Incorporation of the inventivetechnology into such systems may enhance the processing of plastics(e.g., perhaps to be used in bagging foods), or paper (e.g., as acounterfeiting measure in the manufacture of paper money), as but two ofmany examples.

Particular embodiments may include a faraday shield 54 (see, e.g., FIG.20) established within the dielectric form, e.g., substantially betweenthe coil and an interior surface 55 of the dielectric form. One type ofsuch a faraday shield, as shown in FIG. 20, is the squirrel type faradayshield, although indeed other shield types may be used. A variety ofmaterials may be used for the shield's “tube”, including but not limitedto conductive materials such as copper. The Faraday Shield may remove orreduce capacitive coupling between the beginning and end of a coil thatotherwise might be found due to the potential difference between theends of the coil.

Embodiments of the inventive technology may be particularly suited forprocess surfaces (surfaces to be processed, e.g., via etching, cleaning,preheating or deposition) that are substantially flat panels (e.g.,glass windshields, plastic panels) having at least one long dimension.In processing such panels, a continuous feed element may feed thesubstrate such that the entire process surface may be treated by theplasma during a processing event. In such systems, often a plasma willbe generated such that a relatively thin width strip can be treated at atime; upon moving the substrate along such plasma (e.g., from one end tothe other, along its length), perhaps with a type of continuous feedelement 53, the entire surface as intended may be treated. Such panelmay first be established in a pre-chamber 51 at vacuum and subsequentlyfed under the plasma; instead, there may be a type of sealed lock 50through which the substrate may be fed into the process chamber fortreatment. Some systems may involve a process chamber large enough toaccommodate the entire substrate from the beginning of the process,through a feeding event, to the end of the process.

It is of note that certain measures may be taken in order to precludeproblems related to thermal expansion along a longitudinal axis of thedielectric form during plasma processing. Such measures may simplyinvolve provision of an ability of the form to move (e.g., slide)relative to the at least one support, at the support sites. Such may beachieved by well known techniques that provide a slideable seal 59around dielectric form at the support sites. It is of note, for purposesof clarity, that not every occurrence of every element in the figures isreferenced (or “called out”) with that number used in reference to it.

The reader should be aware that the specific discussion may notexplicitly describe all embodiments possible; many alternatives areimplicit. The specification may not explicitly show how each feature orelement can actually be representative of a broader function or of agreat variety of alternative or equivalent elements; these areimplicitly included in this disclosure.

It should also be understood that a variety of changes may be madewithout departing from the essence of the invention. Such changes arealso implicitly included in the description and still fall within thescope of this invention.

Additionally, when used or implied, the term element is to be understoodas encompassing individual as well as plural structures that may or maynot be physically connected. This disclosure should be understood toencompass each such variation, be it a variation of an embodiment of anyapparatus embodiment, a method or process embodiment, or even merely avariation of any element of these.

1. A plasma system, comprising: a coil powered by a power source so asto generate or enhance a plasma in a process chamber; and a dielectricform: established within said process chamber, that has two endssupported by at least one support member at two support sites, and thatdefines an internal volume; wherein at least a portion of said coil isestablished in said internal volume.
 2. A plasma system as described inclaim 1 wherein said coil comprises a longitudinal coil.
 3. A plasmasystem as described in claim 1 wherein said coil comprises a transversecoil.
 4. A plasma system as described in claim 1 wherein said coil is afirst coil, said dielectric form is a first dielectric form, saidinternal volume is a first internal volume, and said first coilestablishes a first magnetic field in a first direction, and furthercomprising a second dielectric form established parallel said firstdielectric form and defining a second internal volume in which at leasta portion of a second coil is established to create a second magneticfield in a direction that is opposite said first direction.
 5. A plasmasystem as described in claim 1 wherein said at least one support membercomprises two support members.
 6. A plasma system as described in claim1 wherein said at least one support member comprises at least oneprocess chamber wall.
 7. A plasma system as described in claim 1 whereinsaid dielectric form is a substantially straight dielectric form.
 8. Aplasma system as described in claim 1 further comprising a magnetron. 9.A plasma system as described in claim 8 wherein said coil and saidmagnetron together generate only one plasma.
 10. A plasma system asdescribed in claim 1 further comprising a chemical vapor depositionelement.
 11. A plasma system as described in claim 1 further comprisingan ion source.
 12. A plasma system as described in claim 1 wherein saiddielectric form defines a form centerline and further comprising asubstrate that has a process surface defining a process surface planeand wherein said form centerline is substantially parallel said processsurface plane.
 13. A plasma system as described in claim 1 wherein saiddielectric form is a substantially horizontal dielectric form.
 14. Aplasma system as described in claim 1 wherein said coil defines a coilcenterline and said dielectric form defines a form centerline that issubstantially parallel said coil centerline.
 15. A plasma system asdescribed in claim 1 further comprising a substrate established forprocessing by said plasma system.
 16. A plasma system, comprising: acoil powered by a power source so as to generate or enhance a plasma ina process chamber; a dielectric form that defines an internal volume anda form centerline; and a substrate support adapted to support asubstrate in said process chamber, wherein said substrate has a processsurface defining a process surface plane, wherein at least a portion ofsaid coil is established in said internal volume, and wherein said formcenterline is substantially parallel said process surface plane.
 17. Aplasma system as described in claim 16 wherein said coil comprises alongitudinal coil.
 18. A plasma system as described in claim 16 whereinsaid coil is a first coil, said dielectric form is a first dielectricform, said internal volume is a first internal volume, and said firstcoil establishes a first magnetic field in a first direction, andfurther comprising a second dielectric form established parallel saidfirst dielectric form and defining a second internal volume in which atleast a portion of a second coil is established to create a secondmagnetic field in a direction that is opposite said first direction. 19.A plasma system as described in claim 16 wherein said form centerline issubstantially straight.
 20. A plasma system as described in claim 16wherein said dielectric form has two ends supported by at least onesupport member at two support sites.
 21. A plasma system as described inclaim 16 further comprising a magnetron.
 22. A plasma system asdescribed in claim 16 wherein said dielectric form defines a formcenterline and further comprising a substrate that has a process surfacedefining a process surface plane that is substantially parallel saidform centerline.
 23. A plasma system as described in claim 16 whereinsaid plasma system is a web coater.